Shrinking device geometries drive greater transmission electron microscope (TEM) use at semiconductor labs to better support the development and monitoring of advanced semiconductor manufacturing processes. However, atomic-scale imaging and analysis of barrier layers, critical interfaces, gate structures, dopant profiles and silicon strain requires ultrathin samples that can take days to prepare using conventional techniques.
The FEI Connectivity Solutions for Ultimate Throughput and Ultimate Imaging is an innovative new process that links the operations of sample preparation, lift-out, transfer, and loading of ultra-thin TEM lamellae for imaging and analysis.
FEI Connectivity Solutions can reduce your “wafers-to-atoms” time from days to hours and dramatically improve your lab’s efficiency and yields.
Taking Sub-45nm Process Characterization to the Next Level
Learn how to prepare, extract, transfer and load TEM samples in 75 minutes, instead of 2.25 days.